Diluted chemical bath deposition of CdZnS as prospective buffer layer in CIGS solar cell

In this study, dilute chemical bath deposition technique has been used to deposit CdZnS thin films on soda-lime glass substrates. The structural, morphological, optoelectronic properties of as-grown films have been investigated as a function of different Zn²⁺ precursor concentrations. The X-ray diffractogram of CdS thin-film reveals a peak corresponding to (002) plane with wurtzite structure, and the peak shift has been observed with the increase of the Zn²⁺ concentration upon formation of CdZnS thin film. From morphological studies, it has been revealed that the diluted chemical bath deposition technique provides homogeneous distribution of film on the substrate even at a lower concentration of Zn²⁺. Optical characterization has shown that the transparency of the film is influenced by Zn²⁺ concentration and when the Zn²⁺ concentration is varied from 0 M to 0.0256 M, bandgap values of resulting films range from 2.42 eV to 3.90 eV while. Furthermore, electrical properties have shown that with increasing zinc concentration the resistivity of the film increases. Finally, numerical simulation validates and suggests that CdZnS buffer layer with composition of 0.0032 M Zn²⁺ concentration would be a promising candidate in CIGS solar cell.     

Silver-substituted (Ag1-xCux)2ZnSnS4 solar cells from aprotic molecular inks

To battle the high open-circuit voltage deficit (V_OC,def) in kesterite (Cu₂ZnSnS₄ or CZTS) solar cells, a current field of research relates to point defect engineering by cation substitution. For example, by partly replacing Cu with an element of a larger ionic radius, such as Ag, the degree of Cu/Zn disorder decreases, and likewise does the associated band tailing. In this paper, solution-processed (Ag_1-xCu_x)₂ZnSnS₄ (ACZTS) samples are prepared through the aprotic molecular ink approach using DMSO as the solvent. The successful incorporation of silver into the CZTS lattice is demonstrated with relatively high silver concentrations, namely Ag/(Ag+Cu) ratios of 13% and 26%. The best device was made with 13% Ag/(Ag+Cu) and had an efficiency of 4.9%. The samples are compared to the pure CZTS sample in terms of microstructure, phase distribution, photoluminescence, and device performance. In the XRD patterns, a decrease in the lattice parameter c/a ratio is observed for ACZTS, as well as significant peak splitting with Ag addition for several of the characteristic kesterite XRD reflections. In addition to the improvement in efficiency, other advantageous effects of Ag-incorporation include enhanced grain growth and an increased band gap. A too high concentration of Ag leads to the formation of secondary phases such as SnS and Ag₂S as detected by XRD.     

The influence of carbon atom distribution in precursors with 1:1 carbon to silicon atoms ratio on structure and thermal evolution of obtained silicon oxycarbide based materials

In this work, a number of precursors with 1:1 silicon to carbon atoms ratio and various carbon atom distributions were synthesized and pyrolyzed in order to obtain silicon oxycarbide based materials. The different carbon atom distributions were obtained using both simple monomers with only one silicon atom, as well as large monomers containing either four or sixteen silicon atoms with predefined carbon atom positions. The silicon oxycarbide based materials were investigated using IR, XRD, ²⁹Si MAS NMR and elemental analysis after annealing at various temperatures, as well as TG. The research shows that carbon atom distribution has great impact on the structure of final material and can be used to tailor the material for its projected uses.     

Ablation behavior of thin-blade co-deposited C/Cx-SiCy composites under the influence of the complex fluid conditions of the oxyacetylene torch

This paper offers a new way of testing the ablation property of material under an oxyacetylene torch using a thin-blade specimen, which costs much less time to reach the maximum temperature and provides a harsh turbulence fluid field that's closer to reality. The thin-blade specimen experiences a higher turbulent intensity than the traditional disk-like specimen, leading to more efficient heat exchange. The fluid field simulation agrees with the testing results. In addition, we manage to synthesize the C/Cx-SiCy composites with the co-deposition chemical vapor infiltration (CVI) method. The C/Cx-SiCy composites exhibit a similar anti-ablation property as C/C composites and consist of enough SiC phase simultaneously, combining the advantages of both C/C composites and C/SiC composites. The thin-blade C/Cx-SiCy composites show a lower linear ablation rate (1.6 μm/s) than C/C composites (4.1 μm/s) and C/SiC composites (19.6 μm/s) during the oxyacetylene test. The glass layer formed on the surface of C/Cx-SiCy could cling to the bulk material instead of peeling off due to the high PyC content in the matrix could protect the SiO₂ from blowing away.     

Phosphorylated chitosan/poly(vinyl alcohol) based proton exchange membranes modified with propylammonium nitrate ionic liquid and silica filler for fuel cell applications

In our previous work, phosphorylated chitosan was modified through polymer blending with poly(vinyl alcohol) (PVA) polymer to produce N-methylene phosphonic chitosan/poly(vinyl alcohol) (NMPC/PVA) composite membranes. The aim of this work is to further investigate the effects of a propylammonium nitrate (PAN) ionic liquid and/or silicon dioxide (SiO₂) filler on the morphology and physical properties of NMPC/PVA composite membranes. The temperature-dependent ionic conductivity of the composite membranes with various ionic liquid and filler compositions was studied by varying the loading of PAN ionic liquid and SiO₂-PAN filler in the range of 5–20 wt%. As the loading of PAN ionic liquid increased in the NMPC/PVA membrane matrix, the ionic conductivity value also increased with the highest value of 0.53 × 10^?3 S cm^?1 at 25 °C and increased to 1.54 × 10^?3 S cm^?1 at 100 °C with 20 wt% PAN. The NMPC/PVA-PAN (20 wt%) composite membrane also exhibited the highest water uptake and ion exchange capacity, with values of 60.5% and 0.60 mequiv g^?1, respectively. In addition, in the single-cell performance test, the NMPC/PVA-PAN (20 wt%) composite membrane displayed a maximum power density, which was increased by approximately 14% compared to the NMPC/PVA composite membrane with 5 wt% SiO₂-PAN. This work demonstrated that modified NMPC/PVA composite membranes with ionic liquid PAN and/or SiO₂ filler showed enhanced performance compared with unmodified NMPC/PVA composite membranes for proton exchange membrane fuel cells.     

Revealing the high sensitivity in the metal toinsulator transition properties of the pulsed laser deposited VO2 thin films

Vanadium dioxide (VO₂) is known as a typical 3d-orbital transition metal oxide exhibiting the metal-to-insulator-transition (MIT) property near room temperature. However, their electronic applications have been challenged by the quality and uniformity of VO₂ thin films. In this work, we demonstrate the high sensitivity in the valence charge of vanadium and the MIT properties of the VO₂ thin films to the deposition temperature. This observation indicates the necessity to eliminate the inhomogeneity in the temperature distribution of substrate during the vacuum-deposition process of VO₂. In addition, a high thermoelectric power factor (PF, e.g., exceeding 1 μWcm⁻¹K⁻²) was achieved in the metallic phase of the VO₂ thin films and this value is comparable to typical organic or oxide thermoelectric materials. We believe this high PF enriches the potential functionality in thermoelectric energy conversions beyond the existing electronic applications of the current vacuum-grown VO₂ thin films.     

Influence of SiC microstructure on its corrosion behavior in molten FLiNaK salt

The influence of the microstructure on the corrosion rate of three monolithic SiC samples in FLiNaK salt at 900 °C for 250 h was studied. The SiC samples, labeled as SiC-1, SiC-2, and SiC-3, had corrosion rates of 0.137, 0.020, and 0.043 mg/cm²h, respectively. Compared with grain size and the presence of special grain boundaries (i.e., Σ3), the content of high-angle grain boundaries (HAGBs) appeared to have the strongest influence on the corrosion rate of SiC in FLiNaK salt, since the corrosion rate increased six times as the concentration of high-angle grain boundaries increased from 19 to 32% for SiC-2 and SiC-1, respectively. These results stress the importance of controlling the content of HAGBs during the production process of SiC.     

Morphological study of thin films: Simulation and experimental insights using horizontal visibility graph

We studied the morphological nature of various thin films such as silicon carbide (SiC), diamond (C), germanium (Ge), and gallium nitride (GaN) on silicon substrate Si(100) using the pulsed laser deposition (PLD) method and Monte Carlo simulation. We, for the first time, systematically employed the visibility algorithm graph to meticulously study the morphological features of various PLD grown thin films. These thin-film morphologies are investigated using random distribution, Gaussian distribution, patterned heights, etc. The nature of the interfacial height of individual surfaces is examined by a horizontal visibility graph (HVG). It demonstrates that the continuous interfacial height of the silicon carbide, diamond, germanium, and gallium nitride films are attributed to random distribution and Gaussian distribution in thin films. However, discrete peaks are obtained in the brush and step-like morphology of germanium thin films. Further, we have experimentally verified the morphological nature of simulated silicon carbide, diamond, germanium, and gallium nitride thin films were grown on Si(100) substrate by pulsed laser deposition (PLD) at elevated temperature. Various characterization techniques have been used to study the morphological, and electrical properties which confirmed the different nature of the deposited films on the Silicon substrate. Decent hysteresis behavior has been confirmed by current-voltage (IV) measurement in all the four deposited films. The highest current has been measured for GaN at ～60 nA and the lowest current in SiC at ～30 nA level which is quite low comparing with the expected signal level (μA). The HVG technique is suitable to understand surface features of thin films which are substantially advantageous for the energy devices, detectors, optoelectronic devices operating at high temperatures.     

Dispersive optical constants and electrical properties of nanocrystalline CuInS2 thin films prepared by chemical spray pyrolysis

Nanocrystalline CuInS₂ thin films were deposited on borosilicate glass substrates via chemical spray pyrolysis method. The structural, morphological, optical, and electrical properties were studied as a function of increasing annealing temperature from 250 to 350 ̊C. XRD analysis showed mixed phases at lower temperatures with the preferred orientation shifting towards the (112) chalcopyrite CuInS₂ plane at higher substrate temperature. The crystallite size increased slightly between 13 and 18 nm with increase in annealing temperature. The optical band gap was determined on basis of Tauc extrapolation method and the Wemple–Di-Domenico single oscillator model. Possible structural and quantum confinement effect may have resulted in relatively larger band gaps of 1.67–2.04 eV, relative to the bulk value of 1.5 eV. The presence of Cu_xS in the as-deposited and wurtzite peaks after annealing at 350 ^̊C play a role in influencing the optical and electrical properties of CuInS₂ thin films.     

Fabrication,structural and vibrational properties,and physical and optical properties tailoring of nanocrystalline MoS2 films

The modification and tuning features of nanostructured films are of great interest because of controllable and distinctive inherent properties in these materials. Here, nanocrystalline MoS₂ films were fabricated on the stainless steels by a radio frequency magnetron sputtering at ambient temperature. X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction and Raman scattering spectroscopy were used to study the chemical state, chemical composition, crystal structure and vibrational properties of the fabricated MoS₂ films. The bias voltage dependent structural evolution and its influence on the optical properties of MoS₂ nanocrystalline films were systematically investigated. Besides, the residual stresses of MoS₂ nanocrystalline films were explored by employing sin²ψ approach. X-ray diffraction demonstrates that the nanocrystalline MoS₂ films have single-phase hexagonal crystal structure. All MoS₂ films are polycrystalline in nature. The bandgap values are found to be intensively dependent on bias voltage. Our findings show that the nanocrystalline MoS₂ films with different physical properties and intense quantum confinement effect can be realized through adjusting bias voltages. This work may provide deep insight for realizing transitional metal dichalcogenide-based nanostructured film optoelectronic devices with tunable physical properties through a traditional, very cost-effective, and large-scale fabrication method.